Journal
SEMICONDUCTORS
Volume 44, Issue 3, Pages 405-412Publisher
PLEIADES PUBLISHING INC
DOI: 10.1134/S1063782610030231
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Optimum conditions for the growth of the GaAs1 - x Sb (x) /GaAs heterostructures by the method of molecular-bean epitaxy are determined; it is shown that effective long-wavelength photoluminescence at T = 300 K can be obtained at wavelengths as long as lambda = 1.3 mu m by increasing the antimony incorporation. As the excitation power is increased, the appearance of a short-wavelength line (in addition to a shift of a photoluminescence maximum to shorter wavelengths characteristic of the type II heterojunctions) related to direct optical transitions in the real space takes place; this relation is confirmed by the results of studying the photoluminescence spectra with subpicosecond and nanosecond time resolution in the case of pulsed excitation.
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