Journal
SEMICONDUCTORS
Volume 43, Issue 5, Pages 668-671Publisher
PLEIADES PUBLISHING INC
DOI: 10.1134/S1063782609050236
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Liquid-phase epitaxy and diffusion from the gas phase have been used to create various kinds of GaSb-based solar cell structures intended for use in cascaded solar-radiation converters. A narrow-gap (GaSb) solar cell was studied in tandem based on a combination of semiconductors GaAs-GaSb (two p-n junctions) and GaInP/GaAs-GaSb (three p-n junctions). The maximum efficiency of photovoltaic conversion in GaSb behind the wide-gap cells is eta = 6.5% (at sunlight concentration ratio of 275X, AM1.5D Low AOD spectrum).
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