Journal
SEMICONDUCTORS
Volume 43, Issue 10, Pages 1363-1368Publisher
PLEIADES PUBLISHING INC
DOI: 10.1134/S1063782609100194
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Funding
- Russian Foundation for Basic Research [08-08-00916_a]
- Council for RF Presidential
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The effect of the properties of interfaces with Group-III phosphides on characteristics of GaInP solar cells has been studied. It is shown that the large valence band offset at the p-GaAs/p-AlInP interface imposes fundamental limitations on the use of p-AlInP layers as a wide-band-gap window in p-n structures of solar cells operating at ratios of high solar light concentration. It is demonstrated that characteristics of p-n solar cells can be, in principle, improved by using a double-layer wide-band-gap window constituted by p-Al0.8Ga0.2As and p-(Al0.6Ga0.4)(0.51)In0.49P layers.
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