Features of the structural, electrokinetic, and magnetic properties of the heavily doped ZrNiSn semiconductor: Dy acceptor impurity

Title
Features of the structural, electrokinetic, and magnetic properties of the heavily doped ZrNiSn semiconductor: Dy acceptor impurity
Authors
Keywords
-
Journal
SEMICONDUCTORS
Volume 43, Issue 1, Pages 7-13
Publisher
Pleiades Publishing Ltd
Online
2009-01-07
DOI
10.1134/s1063782609010035

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