Journal
SEMICONDUCTORS
Volume 42, Issue 4, Pages 394-400Publisher
PLEIADES PUBLISHING INC
DOI: 10.1134/S1063782608040052
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Temperature dependences of electrical conductivity sigma, thermoelectric power alpha, results of differential thermal analysis Delta T-y , thermal conductivity chi, temperature conductivity kappa, and heat capacity C-p were studied in Ag2Te and Ag2Se semiconductors in the region of the phase transition. Two extrema are observed in the temperature dependence chi(T): a maximum in the region of the alpha'->beta' transition and a minimum in the region of the beta'->beta transition; these extrema are caused by the similar dependence C-p (T). It is shown that the alpha ->alpha' and beta'->beta transitions are displacement transitions, while the alpha'->beta' transition is of reconstruction type. It is established that the disorder parameter eta in silver chalcogenides is highly smeared in the region of the phase transition; therefore, disordering of phases at the point of the phase transition is incomplete: 73, 62, and 48% in Ag2Te, Ag2Se, and Ag2S, respectively. The minimum volumes V-ph for new phases are calculated; it is shown that the value of V-ph in displacement transitions is larger than in the reconstruction-type transitions.
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