SiOx layer formation during plasma sputtering of Si and SiO2 targets

Deposition of SiOx layers of variable composition onto silicon wafers was performed by co-sputtering of spaced Si and SiO2 targets in argon plasma. Coordinate dependences of the thickness and refractive index of separately deposited Si and SiO2 layers and the SiOx layer grown during co-sputtering of targets were determined using optical techniques. It was shown that the SiOx layer composition is not equal to a simple sum of thicknesses of separately deposited Si and SiO2 layers. The coordinate dependences of the Si and SiO2 layer thicknesses were calculated. To fit the calculated and experimental data, it is necessary to assume that no less than 10% of silicon is converted to dioxide during co-sputtering. A comparison of the coordinate dependences of the IR absorbance in SiO2 and SiOx layers with experimental ellipsometric data confirmed the presence of excess oxygen in the SiOx layer. Taking into account such partial oxidation of sputtered silicon, composition isolines in the substrate plane were calculated. After annealing of the SiOx layer at 1200 degrees C, photoluminescence was observed in a wafer area predicted by calculations, which was caused by the formation of quantum-size Si nanocrystallites. The photoluminescence intensity was maximum at x = 1.78 +/- 0.3, which is close to the composition optimum for ion-beam synthesis of nanocrystals.