Mechanism of dislocation-governed charge transport in schottky diodes based on gallium nitride

Title
Mechanism of dislocation-governed charge transport in schottky diodes based on gallium nitride
Authors
Keywords
-
Journal
SEMICONDUCTORS
Volume 42, Issue 6, Pages 689-693
Publisher
Pleiades Publishing Ltd
Online
2008-06-12
DOI
10.1134/s1063782608060092

Ask authors/readers for more resources

Find the ideal target journal for your manuscript

Explore over 38,000 international journals covering a vast array of academic fields.

Search

Add your recorded webinar

Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.

Upload Now