Joint effect of temperature and voltage rise rate on the switching process of Si thyristors triggered in impact-ionization wave mode

Published 2018 View Full Article

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Title
Joint effect of temperature and voltage rise rate on the switching process of Si thyristors triggered in impact-ionization wave mode
Authors
Keywords
-
Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume -, Issue -, Pages -
Publisher
IOP Publishing
Online
2018-09-18
DOI
10.1088/1361-6641/aae1f0

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