Polar and semipolar GaN/Al0.5Ga0.5N nanostructures for UV light emitters
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Title
Polar and semipolar GaN/Al0.5Ga0.5N nanostructures for UV light emitters
Authors
Keywords
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Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 29, Issue 8, Pages 084001
Publisher
IOP Publishing
Online
2014-06-06
DOI
10.1088/0268-1242/29/8/084001
References
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Related references
Note: Only part of the references are listed.- Tunnel-injection GaN quantum dot ultraviolet light-emitting diodes
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- AlGaN-Based Light Emitting Diodes Using Self-Assembled GaN Quantum Dots for Ultraviolet Emission
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- Excitons in nitride heterostructures: From zero- to one-dimensional behavior
- (2013) D. Rosales et al. PHYSICAL REVIEW B
- Surface diffusion and layer morphology of ((112¯2)) GaN grown by metal-organic vapor phase epitaxy
- (2012) Simon Ploch et al. JOURNAL OF APPLIED PHYSICS
- Ultra-violet GaN/Al0.5Ga0.5N quantum dot based light emitting diodes
- (2012) J. Brault et al. JOURNAL OF CRYSTAL GROWTH
- The calculation of semipolar orientations for wurtzitic semiconductor heterostructures: application to nitrides and oxides
- (2012) P Bigenwald et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Study of the growth mechanisms of GaN/(Al, Ga)N quantum dots: Correlation between structural and optical properties
- (2011) S. Sergent et al. JOURNAL OF APPLIED PHYSICS
- GaN/Al0.5Ga0.5N (11-22) semipolar nanostructures: A way to get high luminescence efficiency in the near ultraviolet range
- (2011) A. Kahouli et al. JOURNAL OF APPLIED PHYSICS
- Morphology and strain of self-assembled semipolar GaN quantum dots in (112¯2) AlN
- (2010) G. P. Dimitrakopulos et al. JOURNAL OF APPLIED PHYSICS
- White light emitting diodes with super-high luminous efficacy
- (2010) Yukio Narukawa et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Advances in group III-nitride-based deep UV light-emitting diode technology
- (2010) M Kneissl et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Stranski–Krastanow growth of (112¯2)-oriented GaN/AlN quantum dots
- (2009) L. Lahourcade et al. APPLIED PHYSICS LETTERS
- Effects of capping on GaN quantum dots deposited on Al0.5Ga0.5N by molecular beam epitaxy
- (2009) M. Korytov et al. APPLIED PHYSICS LETTERS
- Tailoring the shape of GaN/AlxGa1−xN nanostructures to extend their luminescence in the visible range
- (2009) J. Brault et al. JOURNAL OF APPLIED PHYSICS
- Effect of InGaN quantum dot size on the recombination process in light-emitting diodes
- (2008) Il-Kyu Park et al. APPLIED PHYSICS LETTERS
- Blue-light emission from GaN∕Al0.5Ga0.5N quantum dots
- (2008) T. Huault et al. APPLIED PHYSICS LETTERS
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