Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 28, Issue 7, Pages -Publisher
IOP Publishing Ltd
DOI: 10.1088/0268-1242/28/7/074023
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Funding
- Energy Production Infrastructure Center (EPIC) at University of North Carolina at Charlotte
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In this review article, we discuss the recent advances in the III-nitrides, in particular GaN and its ternary alloys, for photovoltaic and thermoelectric devices. The advantages of using the III-nitrides for electronic and optoelectronic applications are well understood and III-nitride devices are already seen in many consumer based products. Recently, an emerging potential of III-nitrides for energy harvesting has been investigated due to its unique materials properties that include a tunable direct band gap, mechanical and thermal stability at high temperatures and excellent electronic transport properties. This review will show that the potential of using the III-nitrides for photovoltaic and thermoelectric applications will be realized as the impact of intrinsic and extrinsic defects on the photovoltaic and thermoelectric properties are better understood.
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