A donor-like trap at the InGaN/GaN interface with net negative polarization and its possible consequence on internal quantum efficiency

Published 2013 View Full Article

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Title
A donor-like trap at the InGaN/GaN interface with net negative polarization and its possible consequence on internal quantum efficiency
Authors
Keywords
-
Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 28, Issue 10, Pages 105021
Publisher
IOP Publishing
Online
2013-08-29
DOI
10.1088/0268-1242/28/10/105021

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