High on/off current ratio AlGaN/GaN MOS-HEMTs employing RF-sputtered HfO2 gate insulators

Published 2012 View Full Article

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Title
High on/off current ratio AlGaN/GaN MOS-HEMTs employing RF-sputtered HfO2 gate insulators
Authors
Keywords
-
Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 28, Issue 2, Pages 025001
Publisher
IOP Publishing
Online
2012-12-27
DOI
10.1088/0268-1242/28/2/025001

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