Compositional changes in the channel layer of an amorphous In–Ga–Zn-O thin film transistor after thermal annealing

Published 2012 View Full Article

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Title
Compositional changes in the channel layer of an amorphous In–Ga–Zn-O thin film transistor after thermal annealing
Authors
Keywords
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Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 27, Issue 6, Pages 065002
Publisher
IOP Publishing
Online
2012-04-23
DOI
10.1088/0268-1242/27/6/065002

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