Accurate measurement of the formation rate of iron-boron pairs in silicon

This paper presents new data regarding the formation rate of iron-boron (Fe(i)-B) pairs in p-type crystalline silicon. Improvements in the temperature control of the sample, a reduction in measurement error of the effective lifetime of the sample after all Fe(i)-B pairs have reformed, and improved statistical analysis have led to a revision of the value of the pre-factor in the equation relating the association time constant of iron-acceptor pairs to the acceptor concentration. The new equation predicts a 14% slower repairing time than a previous commonly used equation, and reduces the uncertainty in determining the acceptor concentration from the repairing time from +/- 24% to +/- 7%.