Efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes with nonuniform current spreading

Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes

(2010) Shih-Chun Ling et al.   APPLIED PHYSICS LETTERS

Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis

(2010) Aurélien David et al.   APPLIED PHYSICS LETTERS

Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes

(2010) Qi Dai et al.   APPLIED PHYSICS LETTERS

Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes

(2010) Hongping Zhao et al.   SOLID-STATE ELECTRONICS

Theoretical investigation of Auger recombination on internal quantum efficiency of blue light-emitting diodes

(2009) S.-H. Yen et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Investigation of wavelength-dependent efficiency droop in InGaN light-emitting diodes

(2009) J.-R. Chen et al.   APPLIED PHYSICS B-LASERS AND OPTICS

Auger recombination rates in nitrides from first principles

(2009) Kris T. Delaney et al.   APPLIED PHYSICS LETTERS

Direct measurement of auger recombination in In0.1Ga0.9N/GaN quantum wells and its impact on the efficiency of In0.1Ga0.9N/GaN multiple quantum well light emitting diodes

(2009) M. Zhang et al.   APPLIED PHYSICS LETTERS

Rate equation analysis of efficiency droop in InGaN light-emitting diodes

(2009) Han-Youl Ryu et al.   APPLIED PHYSICS LETTERS

Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities

(2009) Q. Dai et al.   APPLIED PHYSICS LETTERS

Effect of electron blocking layer on efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes

(2009) Sang-Heon Han et al.   APPLIED PHYSICS LETTERS

Carrier distribution in (0001)InGaN∕GaN multiple quantum well light-emitting diodes

(2008) Aurélien David et al.   APPLIED PHYSICS LETTERS

On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers

(2008) Jinqiao Xie et al.   APPLIED PHYSICS LETTERS

On the origin of efficiency roll-off in InGaN-based light-emitting diodes

(2008) X. A. Cao et al.   JOURNAL OF APPLIED PHYSICS

Bandgap dependence of current crowding effect in 3–5 µm InAsSb/InAs planar light emitting devices

(2008) V K Malyutenko et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY