Injector doping level-dependent continuous-wave operation of InP-based QCLs at λ ∼ 7.3 µm above room temperature

Title
Injector doping level-dependent continuous-wave operation of InP-based QCLs at λ ∼ 7.3 µm above room temperature
Authors
Keywords
-
Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 25, Issue 12, Pages 125015
Publisher
IOP Publishing
Online
2010-11-23
DOI
10.1088/0268-1242/25/12/125015

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