Study of negative oxygen vacancies in Gd2O3-doped HfO2thin films as high-kgate dielectrics

Published 2010 View Full Article

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Title
Study of negative oxygen vacancies in Gd2O3-doped HfO2thin films as high-kgate dielectrics
Authors
Keywords
-
Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 25, Issue 7, Pages 075008
Publisher
IOP Publishing
Online
2010-06-12
DOI
10.1088/0268-1242/25/7/075008

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