Evaluation of NbN thin films grown by MOCVD and plasma-enhanced ALD for gate electrode application in high-k/SiO2gate stacks

Title
Evaluation of NbN thin films grown by MOCVD and plasma-enhanced ALD for gate electrode application in high-k/SiO2gate stacks
Authors
Keywords
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Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 25, Issue 4, Pages 045009
Publisher
IOP Publishing
Online
2010-02-24
DOI
10.1088/0268-1242/25/4/045009

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