Physical properties and growth kinetics of co-sputtered indium-zinc oxide films

Indium-doped zinc oxide (IZO) films were fabricated by radio-frequency (RF) magnetron sputtering through co-deposition of zinc oxide (ZnO) and indium (In) at ambient temperature. Transparency of the IZO films is higher than 80% in the visible range while the optical band gap decreases with increasing In dopant concentration. The optimal measured resistivity, Hall mobility and carrier concentration of the film are 1.39 x 10(-3) Omega cm, 10.11 cm(2) V-1 s(-1) and 5.35 x 10(20) cm(-3), respectively. The In dopant favors smoothing the film surface. The In dopant concentration in the film decreases vertically from the surface to the interface due to the surface segregation during the kinetic deposition process. The misfit strains of the films are gradually relaxed through dislocation.