Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 24, Issue 7, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0268-1242/24/7/075016
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Funding
- Korea Ministry of Commerce, Industry and Energy
- Ministry of Knowledge Economy (MKE)
- Korea Industrial Technology Foundation (KOTEF)
- Ministry of Public Safety & Security (MPSS), Republic of Korea [2008-A01-002] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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The electrical characteristic of phase change material was studied in nano-scale using nanoimprint lithography and a conducting atomic force microscopy measurement system. Nanoimprint lithography was used to fabricate the nano-scale phase change material pattern. A Pt-coated AFM tip was used as a top electrode to measure the electrical characteristics of the GST nano-pillar. The GST nano-pillar, which is 200 nm in diameter, was amorphized by 2 V and 5 ns reset pulse and was then brought back to the crystalline phase by applying 1.3 V and 150 ns set pulse. Using this measurement system, the GST nano-pillar was switched between the amorphous and crystalline phases more than five times. The results of the reset and the set current measurement with the GST nano-pillar sizes show that the reset and the set currents also decreased with the decrease of the GST pillar size.
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