Properties of GaN-based light-emitting diode thin film chips fabricated by laser lift-off and transferred to Cu

Title
Properties of GaN-based light-emitting diode thin film chips fabricated by laser lift-off and transferred to Cu
Authors
Keywords
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Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 23, Issue 12, Pages 125022
Publisher
IOP Publishing
Online
2008-10-30
DOI
10.1088/0268-1242/23/12/125022

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