A low-voltage flash memory cell utilizing the gate-injection program/erase method with a recessed channel structure

Published 2008 View Full Article

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Title
A low-voltage flash memory cell utilizing the gate-injection program/erase method with a recessed channel structure
Authors
Keywords
-
Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 23, Issue 7, Pages 075035
Publisher
IOP Publishing
Online
2008-05-29
DOI
10.1088/0268-1242/23/7/075035

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