Journal
SCIENTIFIC REPORTS
Volume 5, Issue -, Pages -Publisher
NATURE RESEARCH
DOI: 10.1038/srep11881
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Funding
- National Natural Science Foundation of China [51302136, 11304158]
- Natural Science Foundation of Jiangsu Province Universities [12KJB510016]
- Jiangsu Province College Graduate Research and Innovation Projects [CXLX13_454]
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In this paper, we prepared a novel structure to enhance the electroluminescence intensity from Si quantum dots/SiO(2)multilayers. An amorphous Si/SiO2 multilayer film was fabricated by plasma-enhanced chemical vapor deposition on a Pt nanoparticle (NP)-coated Si nanopillar array substrate. By thermal annealing, an embedded Si quantum dot (QDs)/SiO2 multilayer film was obtained. The result shows that electroluminescence intensity was significantly enhanced. And, the turn-on voltage of the luminescent device was reduced to 3 V. The enhancement of the light emission is due to the resonance coupling between the localized-surface-plasmon (LSP) of Pt NPs and the band-gap emission of Si QDs/SiO2 multilayers. The other factors were the improved absorption of excitation light and the increase of light extraction ratio by surface roughening structures. These excellent characteristics are promising for silicon-based light-emitting applications.
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