Journal
SCRIPTA MATERIALIA
Volume 68, Issue 9, Pages 759-762Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.scriptamat.2012.12.032
Keywords
Mechanical twinning; Generalized planar fault energies; Stoichiometric effect; TiAl alloys; First-principles calculation
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Funding
- National Basic Research Program of PR China [2011CB605501]
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We calculated generalized planar fault energies along 1/6 < 11-2](111) true- and 1/6 < 1-21](111) pseudo-twinning directions and correlated with the propensity for mechanical twinning in gamma TiAl alloys with different Al contents. The generalized planar fault energies along 1/6 < 11-2](111) increase with increasing Al content. The predicted critical twinning stresses show that hypostoichiometric TiAl undergoes twinning more readily than stoichiometric and hyperstoichiometric TiAl. The critical stresses for 1/6 < 1-21](111) are dramatically larger than those for 1/6 < 11-2](111), and thus twinning occurs through energetically favorable 1/6 < 11-2](111). (C) 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
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