Journal
SCRIPTA MATERIALIA
Volume 59, Issue 9, Pages 912-915Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.scriptamat.2007.12.025
Keywords
Microelectromechanical systems (MEMS); Fatigue fracture; High-resolution electron microscopy (HREM)
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Funding
- U.S. Defense Advanced Research Projects Agency
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Polycrystalline silicon (polysilicon) microelectromechanical systems (MEMS) devices subjected to constant tensile stresses do not display delayed fracture in humid ambients unless they also contain thick (>45 nm) surface oxide layers, which are then susceptible to moisture-assisted stress corrosion. Polysilicon MEMS devices with typical (similar to 3 nm thick) native oxides do not show any thickening of the surface oxide layer after 3 x 10(7) fatigue cycles, excluding stress corrosion of the surface oxide as a cause of fatigue failure. Possible origins of polysilicon fatigue are discussed. (C) 2008 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
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