Article
Nanoscience & Nanotechnology
Yifei Wang, Vinh X. Ho, Zachary N. Henschel, Michael P. Cooney, Nguyen Q. Vinh
Summary: The study reports the 1/f noise characteristics at low frequency in graphene field-effect transistors, where reducing the number of charged impurities through optimizing fabrication processes has helped in reducing the noise level in devices. Insights into the underlying physical mechanisms of the noise at low frequency have been provided.
ACS APPLIED NANO MATERIALS
(2021)
Article
Nanoscience & Nanotechnology
Geonwoo Park, Dohyun Go, Sungchan Jo, Tae Hoon Lee, Jeong Woo Shin, Jihwan An
Summary: This study demonstrates the first application of UV-assisted atomic layer deposition (UV-ALD) to graphene surfaces, and the fabrication of graphene field-effect transistors (GFETs) with UV-ALD Al2O3 dielectric thin films. Optimal UV irradiation during the ALD process results in denser and smoother Al2O3 dielectric films deposited on the graphene surface with an intimate graphene-dielectric interface. The GFETs with a high-quality dielectric layer deposited by UV-ALD show significantly improved performance compared to those with thermal ALD.
ADVANCED ELECTRONIC MATERIALS
(2023)
Article
Engineering, Electrical & Electronic
Sumit R. Patil, Viral N. Barhate, Vilas S. Patil, Khushabu S. Agrawal, Ashok M. Mahajan
Summary: The study investigates the effects of plasma-enhance atomic layer deposition (PEALD) on ZrO2/La2O3/ZrO2 (ZLZ) nanolaminates and the impact of different annealing temperatures. The film annealed at 400 degrees C exhibits a stable pyrochlore phase, resulting in the lowest leakage current density in the MIM capacitor. The research suggests that PEALD nanolaminated high-k MIM capacitors have potential applications in nanoelectronics.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2022)
Article
Physics, Applied
Kang Yuan, Rui Ma, Li Yang, Yang Yang, Jiaming Sun
Summary: In this study, Ga2O3/TiO2 nanolaminate films were fabricated to improve the electrical injection and stability of Al2O3:Er MOSLEDs. The optimal GTO nanolaminate demonstrated high tolerance to electric field, resulting in enhanced electroluminescence performance and excitation efficiency. The design principle of the dielectric nanolaminates provides a promising route for the application of oxide-based optoelectronic devices.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2022)
Article
Chemistry, Physical
Min Ji Jeong, Seung Won Lee, Yoonchul Shin, Jeong-Hun Choi, Ji-Hoon Ahn
Summary: This study proposes a new method to realize rutile-TiO2 thin films on TiN electrodes without an additional post-thermal process. By introducing Sn and optimizing TiO2, a high dielectric constant and improvement in leakage current can be achieved. This approach provides a new direction for future high-k research on next-generation DRAM capacitors.
SURFACES AND INTERFACES
(2023)
Article
Physics, Multidisciplinary
Ze Feng, Yitong Wang, Jilong Hao, Meiyi Jing, Feng Lu, Weihua Wang, Yahui Cheng, Shengkai Wang, Hui Liu, Hong Dong
Summary: This study successfully fabricated ion polarization dielectric of the LiPON-Al2O3 hybrid structure using atomic layer deposition, which exhibits a frequency-dependent high dielectric constant, providing a new strategy to engineers for modifying the gate oxide dielectric constant.
Article
Multidisciplinary Sciences
Zheyi Lu, Yang Chen, Weiqi Dang, Lingan Kong, Quanyang Tao, Likuan Ma, Donglin Lu, Liting Liu, Wanying Li, Zhiwei Li, Xiao Liu, Yiliu Wang, Xidong Duan, Lei Liao, Yuan Liu
Summary: A dry dielectric integration strategy enables the transfer of wafer-scale and high-kappa dielectrics on top of 2D semiconductors. An ultra-thin buffer layer is used to pre-deposit sub-3 nm thin Al2O3 or HfO2 dielectrics, which are then mechanically dry-transferred on top of MoS2 monolayers. The transferred ultra-thin dielectric film exhibits wafer-scale flatness and uniformity without any cracks, showing high capacitance, low leakage currents, and excellent transistor properties.
NATURE COMMUNICATIONS
(2023)
Article
Chemistry, Physical
Maxim G. Kozodaev, Yury Yu. Lebedinskii, Ivan V. Zabrosaev, Roman I. Romanov, Dmitry I. Yakubovsky, Sergey M. Novikov, Mikhail K. Tatmyshevskiy, Valentyn S. Volkov, Andrey M. Markeev
Summary: This study demonstrates the possibility of tuning the sulfur vacancy (VS) concentration in both the sub-surface level of a bulk crystal and few-layer films by controlling the He+ ion energy and irradiation dose. X-ray photoelectron spectroscopy (XPS) analysis reveals significant sulfur loss in the bulk crystal under 500 eV He+ irradiation, while only Frenkel VS formation is observed for the few-layer MoS2 films. The generated sulfur vacancies are readily passivated through Mo-OH species during subsequent water vapor exposure in the ALD reactor, resulting in enhanced ALD HfO2 growth. The study shows the potential for achieving ultrathin and continuous film growth on irradiated bulk MoS2 surfaces, as well as a doubling of the surface density of ALD active sites for monolayer MoS2 films.
JOURNAL OF PHYSICAL CHEMISTRY C
(2023)
Article
Chemistry, Physical
Maofan Zhou, Xuefei Xu, Gengping Wan, Pengpeng Mou, Shengjie Teng, Guizhen Wang
Summary: In this study, we fabricated ZnO/AC/Graphene hybrid films as multifunctional materials for heat conduction and microwave absorption. The films showed excellent performance in terms of reflection loss and absorption bandwidth. The absorption frequency could be adjusted by changing the ZnO/AC. The results of this work provide a novel strategy for the design of functional materials for heat-conduction microwave absorption applications.
Article
Nanoscience & Nanotechnology
Yachen Xu, Huimin Chen, Haiyang Xu, Minyu Chen, Pengchao Zhou, Shuzhe Li, Ge Zhang, Wei Shi, Xuyong Yang, Xingwei Ding, Bin Wei
Summary: In this study, a composite structure composed of Al2O3/HfO2 with different Al2O3/HfO2 cycles prepared by atomic layer deposition (ALD) was designed to obtain high-quality ultrathin (1-12 nm) dielectric films. The film exhibited a layer growth mode and physically formed at 3 nm, with the electrically stable film thickness being 10 nm. The ALD-prepared composite strategy provides a simple and practical way to obtain high-quality dielectric films.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Electrochemistry
Tung-Ming Pan, Chi-Lin Chan
Summary: This study investigated HfO2 thin films deposited on silicon substrates using different methods for pH sensing applications. Through examination of surface structures and properties, the ALD method was found to have higher pH sensitivity, lower drift rate, and smaller hysteresis voltage compared to the sputtering method. The ALD-HfO2 sensing film on nanoimprinted Si substrate demonstrated a better pH response and is a promising candidate for pH sensing applications in advanced CMOS technology.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
(2021)
Article
Engineering, Electrical & Electronic
Alexander C. Benken, Yogesh B. Gianchandani
Summary: A high yield fabrication process is reported for pressure sensors, based on sapphire substrates and plasma-deposited thin films, providing extraordinarily high output swing relative to baseline and parasitic capacitance. The use of massively parallel diaphragm arrays enables superior full-scale range and resolution in a small footprint. Five types of sensor chips with different diaphragm configurations and corresponding pressure ranges and resolutions are described, along with the design features and experimental results.
IEEE SENSORS JOURNAL
(2021)
Article
Chemistry, Multidisciplinary
Jiangwei Liu, Masayuki Okamura, Hisanori Mashiko, Masataka Imura, Meiyong Liao, Ryosuke Kikuchi, Michio Suzuka, Yasuo Koide
Summary: Super-high dielectric constant (k) AlOx/TiOy nanolaminates (ATO NLs) are deposited through atomic layer deposition technique for application in next-generation electronics. The shape of the Raman spectrum tends to resemble that of a single AlOx layer as AlOx content increases in each ATO sublayer. The deposition conditions of ATO NLs have significant effects on the electrical properties of metal/ATO NL/metal capacitors.
Article
Chemistry, Physical
Lu Li, Yalin Peng, Jinpeng Tian, Fanfan Wu, Xiang Guo, Na Li, Wei Yang, Dongxia Shi, Luojun Du, Guangyu Zhang
Summary: This study demonstrates the batch production of transfer-free MoS2 top-gate devices directly on sapphire growth substrates. By introducing substrate steps, high-quality dielectric layers can be directly deposited onto the grown monolayer MoS2, enabling the high-quality fabrication of devices.
Article
Biochemistry & Molecular Biology
Gu Ran, Ying Xia, Lijiao Liang, Chuan Fu
Summary: ALD is a promising method for preparing nanomaterials with controlled thickness and uniformity. The Ni NPs deposited on rGO by ALD exhibit high conductivity and large specific surface area, showing high electrocatalytic activity for serotonin. The Ni NPs-rGO nanocomposite modified electrode demonstrates enhanced current responses, wide linear range, low detection limit for serotonin, as well as good stability, selectivity, and anti-interference ability.
BIOELECTROCHEMISTRY
(2021)
