Journal
SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS
Volume 10, Issue 6, Pages -Publisher
TAYLOR & FRANCIS LTD
DOI: 10.1088/1468-6996/10/6/065001
Keywords
germanium; porous structured film; visible photoluminescence; semiconducting behavior
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Funding
- National Natural Science foundation of China [50802046]
- National Basic Research Program of China [2007CB924900]
- National Innovation Research Group foundation of China [60821692]
- Key Project of Shanghai Science and Technology Commission [07JC14018]
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Porous germanium films with good adhesion to the substrate were produced by annealing GeO2 ceramic films in H-2 atmosphere. The reduction of GeO2 started at the top of a film and resulted in a Ge layer with a highly porous surface. TEM and Raman measurements reveal small Ge crystallites at the top layer and a higher degree of crystallinity at the bottom part of the Ge film; visible photoluminescence was detected from the small crystallites. Porous Ge films exhibit high density of holes (10(20) cm(-3)) and a maximum of Hall mobility at similar to 225 K. Their p-type conductivity is dominated by the defect scattering mechanism.
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