Tunable Field Control Over the Binding Energy of Single Dopants by a Charged Vacancy in GaAs

Oxide Dilute Magnetic Semiconductors—Fact or Fiction?

(2011) J.M.D. Coey et al.   MRS BULLETIN

Enhanced binding energy of manganese acceptors close to the GaAs(110) surface

(2010) J. K. Garleff et al.   PHYSICAL REVIEW B

Surface Induced Asymmetry of Acceptor Wave Functions

(2010) C. Çelebi et al.   PHYSICAL REVIEW LETTERS

Mapping the wave function of transition metal acceptor states in the GaAs surface

(2009) Anthony Richardella et al.   PHYSICAL REVIEW B

Magnetic properties of substitutional Mn in (110) GaAs surface and subsurface layers

(2009) T. O. Strandberg et al.   PHYSICAL REVIEW B

Enhanced Donor Binding Energy Close to a Semiconductor Surface

(2009) A. P. Wijnheijmer et al.   PHYSICAL REVIEW LETTERS

Memristive switching mechanism for metal/oxide/metal nanodevices

(2008) J. Joshua Yang et al.   Nature Nanotechnology

Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET

(2008) G. P. Lansbergen et al.   Nature Physics

Asymmetry of acceptor wave functions caused by surface-related strain and electric field in InAs

(2008) S. Loth et al.   PHYSICAL REVIEW B

Atomically precise impurity identification and modification on the manganese doped GaAs(110) surface with scanning tunneling microscopy

(2008) J. K. Garleff et al.   PHYSICAL REVIEW B

Effect of charge manipulation on scanning tunneling spectra of single Mn acceptors in InAs

(2008) Felix Marczinowski et al.   PHYSICAL REVIEW B

STM Images of Subsurface Mn Atoms in GaAs: Evidence of Hybridization of Surface and Impurity States

(2008) J.-M. Jancu et al.   PHYSICAL REVIEW LETTERS

Controlled Charge Switching on a Single Donor with a Scanning Tunneling Microscope

(2008) K. Teichmann et al.   PHYSICAL REVIEW LETTERS