Beta-Gallium Oxide Nanoflags and Its Ultraviolet Photoluminescence Performances

We report the synthesis of the beta-Gallium Oxide (beta-Ga2O3) nanoflags with a novel shape of two-dimensional nanostructure and its potential application on UV light detector. The beta-Ga2O3 nanoflags were prepared using gold nanoparticles as catalyst by the chemical vapor deposition method. The growth mechanism of nanoflags follows the vapor-liquid-solid mode. The properties of the beta-Ga2O3 nanoflags were charactered by various measurements, including optical absorption spectrum, the energy dispersive X-ray spectroscopy spectrum, X-ray diffraction pattern and photoluminescence spectrum. The scanning electron microscopy images indicate that the gallium oxide (Ga2O3) nanoflags grow via mechanism. The X-ray diffraction pattern and the energy dispersive X-ray spectroscopy spectrum revealed that the Ga2O3 nanoflags have a crystal structure of monoclinic beta-Ga2O3 with high purity and density. An absorption edge at similar to 270 nm in the optical absorption spectrum and a strong ultraviolet peak at similar to 349 nm were also observed at room temperature, indicated that the Ga2O3 nanoflags are the promising wide-bandgap oxides with two-dimensional structure to exploit the potential optical functionalities in the field of solar-blind detectors and ultraviolet light emitters.