Journal
RADIATION EFFECTS AND DEFECTS IN SOLIDS
Volume 170, Issue 3, Pages 175-182Publisher
TAYLOR & FRANCIS LTD
DOI: 10.1080/10420150.2014.984612
Keywords
ion implantation; boron nitride; Raman spectroscopy
Funding
- DST-NRF Centre of Excellence in Strong Materials
- University of the Witwatersrand
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Single energy ion implantation of hexagonal boron nitride (h-BN) at various fluences and keV energies has shown that there is a change in the local symmetry of the crystal from hexagonal to the cubic (c-BN) symmetry. These conclusions have been primarily based on Raman scattering (RS) and Fourier transform infrared spectroscopy. Transmission electron microscopy (TEM) analyses have been a challenge because the sample preparation for cross-sectional study of both the polycrystalline substrates and single-crystal material used in the study presented problems that were difficult to circumvent. A multiple-energy implant with different fluence fractions has been used to create a uniform implanted layer in the material from the surface to the end of range of the implant in this study. We report on the initial RS studies on these samples.
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