Journal
PROGRESS IN PHOTOVOLTAICS
Volume 23, Issue 10, Pages 1367-1374Publisher
WILEY
DOI: 10.1002/pip.2554
Keywords
Cu(InGa)Se-2; surface sulfurization; thin film solar cell; admittance spectroscopy
Funding
- NEDO as a Development of Next-generation High-Performance Technology for Photovoltaic Power Generation System project
- Grants-in-Aid for Scientific Research [14F04767] Funding Source: KAKEN
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In this work, the impacts of surface sulfurization of high-quality Cu(In1-x,Ga-x)Se-2 (CIGS) thin films deposited by three-stage process on the film properties and the cell performance were investigated. The CIGS thin films were sulfurized at 550 degrees C for 30 min using H2S gas. The X-ray photoelectron spectroscopy analysis revealed that sulfur atoms diffused into the CIGS surface layer and that the valence band minimum was lowered by the film sulfurization. The open circuit voltage (V-oc) drastically increased from 0.590 to 0.674V as a result of the sulfurization process. Temperature-dependent current-voltage and capacitance-frequency measurements also revealed that interface recombination was drastically decreased by the lowering of the defect's activation energy level at the vicinity of the buffer/CIGS interface after the sulfurization. Copyright (C) 2014 John Wiley & Sons, Ltd.
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