Journal
PROGRESS IN PHOTOVOLTAICS
Volume 19, Issue 2, Pages 165-169Publisher
WILEY-BLACKWELL
DOI: 10.1002/pip.1002
Keywords
gettering; annealing; multicrystalline; LBIC; iron; solar cell processing
Funding
- Ministerio de Educacion y Ciencia, Spain [ENE2007-60720/ALT]
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The influence of an annealing step at about 500 degrees C after emitter diffusion of multicrystalline solar cells is investigated. Neighboring wafers from a silicon ingot were processed using different annealing durations and temperatures. The efficiency of the cells was measured and detailed light beam induced current measurements were performed. These show that mainly areas with high contents of precipitates near the crucible walls are affected by the anneal. An efficiency increase from 14.5 to 15.4% by a 2 h anneal at 500 degrees C was observed. The effect seems to be more likely external than internal gettering. Copyright (C) 2010 John Wiley & Sons, Ltd.
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