Journal
PROGRESS IN ORGANIC COATINGS
Volume 61, Issue 2-4, Pages 245-248Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.porgcoat.2007.09.031
Keywords
plasma polymerization; PECVD; dielectric constant
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Plasma polymerized cyclohexane and TEOS hybrid thin films have been deposited on silicon substrates at room temperature with varying RF power by plasma-enhanced chemical vapor deposition (PECVD) method. As-grown thin films were annealed in vacuum. Cyclohexane monomer was utilized as organic precursor and TEOS monomer as inorganic precursor. Hydrogen and argon were used as bubbler and carrier gases, respectively. The as-grown plasma polymerized hybrid thin films were analyzed by FT-IR spectroscopy, hardness and modulus measurements, and electrical properties. Annealed hybrid thin films were also analyzed. The dielectric constant of thin films increases with increasing plasma power. (C) 2007 Elsevier B.V. All rights reserved.
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