Air-stable ambipolar field-effect transistor based on a solution-processed octanaphthoxy-substituted tris(phthalocyaninato) europium semiconductor with high and balanced carrier mobilities
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Title
Air-stable ambipolar field-effect transistor based on a solution-processed octanaphthoxy-substituted tris(phthalocyaninato) europium semiconductor with high and balanced carrier mobilities
Authors
Keywords
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Journal
Chemical Science
Volume 6, Issue 3, Pages 1967-1972
Publisher
Royal Society of Chemistry (RSC)
Online
2014-12-10
DOI
10.1039/c4sc03492a
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