Journal
IEEE PHOTONICS JOURNAL
Volume 7, Issue 3, Pages -Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOT.2015.2419217
Keywords
Electrooptic effects; photonics
Funding
- Engineering and Physical Sciences Research Council under Project MIGRATION [EP/L01162X/1]
- Royal Society through University Research Fellowship
- Air Force Office of Scientific Research [FA9550-14-1-019]
- Engineering and Physical Sciences Research Council [EP/L01162X/1] Funding Source: researchfish
- EPSRC [EP/L01162X/1] Funding Source: UKRI
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Germanium is becoming an important material for mid-infrared photonics, but the modulation mechanisms in Ge are not yet well understood. In this paper, we estimate the size of free-carrier electroabsorption and electrorefraction effects in germanium across the 2- to 16-mu m wavelength range at 300 K. The predictions are based as much as possible upon experimental absorption data from the literature and are supported by extrapolations from experimental data using first-principle quantum theoretical modeling. We find that free-carrier absorption is substantially stronger in Ge than in Si.
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