Spectroscopic characterization of laser ablated silicon plasma

We report plasma parameters of laser ablated silicon plasma using the fundamental (1064 nm) and second harmonics (532 nm) of a Nd : YAG laser. The electron temperature and electron number density are evaluated using the Boltzmann plot method and Stark broadened line profile, respectively. The electron temperature and electron number density are deduced using the same laser irradiance 2-16 GWcm(-2) for 1064 nm and 532 nm as 6350-7000K and (3.42-4.44) x 10(16) cm(-3) and 6000-6400K and (4.20-5.72) x 10(16) cm(-3), respectively. The spatial distribution of plasma parameters shows a decreasing trend of 8200-6300K and (4.00-3.60) x 10(16) cm(-3) for 1064 nm and 6400-5500K and (5.10-4.50) x 10(16) cm(-3) for 532 nm laser ablation. Furthermore, plasma parameters are also investigated at low pressure from 45 to 550 mbar, yielding the electron temperature as 4580-5535K and electron number density as (1.51-2.12) x 10(16) cm(-3). The trend of the above-mentioned results is in good agreement with previous investigations. However, wavelength-dependent studies and the spatial evolution of plasma parameters have been reported for the first time.