Journal
PHYSICS LETTERS A
Volume 378, Issue 30-31, Pages 2312-2316Publisher
ELSEVIER
DOI: 10.1016/j.physleta.2014.06.004
Keywords
Valence band offset; X-ray photoelectron spectroscopy; Non-polar ZnO/Zn1-xMgxO heterojunctions; Mg composition; Type-I band alignment
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Funding
- National Natural Science Foundation of China [51302244, 51172204]
- Zhejiang Provincial Public Technology Research of China [2012C21114]
- Zhejiang Provincial Natural Science Foundation of China [LQ13E020001]
- Ministry of Education of China [2011010110013]
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The valence band offsets (Delta E-V) of the alpha-plane non-polar ZnO/Zn1-xMgxO heterojunctions grown by plasma-assisted molecular beam epitaxy were investigated by X-ray photoelectron spectroscopy. Excluding the strain effect, the Delta E-V are determined to be -0.02 eV, -0.02 eV, -0.03 eV, and the related conduction band offsets (Delta E-C) are deduced to be 0.06 eV, 0.10 eV, 0.17 eV for x = 0.05, 0.08 and 0.13, respectively. The heterojunctions form in the type-I straddling alignment and the Mg composition dependent band alignment is revealed. Our results show important polarity dependence for ZnO/Zn1-5MgxO heterojunctions. The accurate determination of the band alignment of non-polar ZnO/Zn1-xMgxO heterojunctions is valuable for designing non-polar ZnO-based optoelectronic devices. @ 2014 Elsevier B.V. All rights reserved.
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