Journal
PHYSICS LETTERS A
Volume 377, Issue 15, Pages 1134-1138Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.physleta.2013.02.048
Keywords
Graphene nanoribbon; Electronic transport; Rectification; Negative differential resistance
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Funding
- National Natural Science Foundation of China [11104115]
- Natural Science Foundation of Shandong Province, China [ZR2009AL004]
- Doctoral Foundation of University of Jinan, China [XBS1004]
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By applying the nonequilibrium Green's function formalism combined with density functional theory, we have investigated the electronic transport properties of two nitrogen-doped armchair graphene nanoribbon-based junctions M1 and M2. In the left part of M1 and M2, nitrogen atoms are doped at two edges of the nanoribbon. In the right part, nitrogen atoms are doped at one edge and at the center for M1 and M2, respectively. Obvious rectifying and negative differential resistance behaviors are found, which are strongly dependent on the doping position. The maximum rectification and peak-to-valley ratios are up to the order of 10(4) in M2. (C) 2013 Elsevier B.V. All rights reserved.
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