Article
Engineering, Mechanical
Mei Guo, Ran Yang, Meng Zhang, Renyuan Liu, Yongliang Zhu, Gang Dou
Summary: A novel memcapacitor designed with SBT memristor and two capacitors is proposed in this paper, along with a fifth-order memcapacitor and memristor chaotic circuit. The dynamic behaviors and stability of the system are analyzed, revealing various dynamic phenomena under different initial values and parameters. The study expands the research methods of memcapacitor for chaotic circuits.
NONLINEAR DYNAMICS
(2021)
Review
Computer Science, Information Systems
Francisco J. Romero, Akiko Ohata, Alejandro Toral-Lopez, Andres Godoy, Diego P. Morales, Noel Rodriguez
Summary: The concept of memristor was introduced by Prof. L. Chua in 1971 as a new circuit element, later extended to memcapacitors and meminductors. The non-linear and non-volatile properties of these devices have attracted interest for various applications.
Article
Engineering, Electrical & Electronic
Fuping Wang, Faqiang Wang
Summary: This study aims to design and implement a voltage controlled floating memcapacitor based on a commercial memristor. It is found that the DRM of memcapacitor exhibits different characteristics after considering the current limiting resistor.
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS
(2022)
Article
Engineering, Electrical & Electronic
Kapil Bhardwaj, Mayank Srivastava
Summary: The paper discusses the impossibility of designing a single input single element-controlled universal memelement emulator in detail. Such a configuration would allow the realization of any of the three memelements (Memristor/Memcapacitor/Meminductor) by using a circuit element as an inductor (L), capacitor (C), or resistor (R) with the same input port. The analysis shows that it is not feasible to build a highly flexible universal memelement emulator with this kind of circuit configuration. Only two ideal memelements can be realized at most using these structures. If these circuit structures are used to realize the remaining third memelement, the resulting element becomes a non-ideal memelement. Two circuit configurations are provided to demonstrate this theory using charge-controlled and flux-controlled memelement emulation approaches.
CIRCUITS SYSTEMS AND SIGNAL PROCESSING
(2023)
Article
Mathematics, Interdisciplinary Applications
Ivo Petras
Summary: This paper discusses new oscillator structures that include new elements called memory elements, such as memristors, meminductors, and memcapacitors. These circuits can exhibit oscillations and chaotic behavior, and new mathematical models for fractional-order elements and whole oscillator circuits are proposed.
FRACTAL AND FRACTIONAL
(2022)
Article
Physics, Multidisciplinary
Yue Liu, Fang Liu, Wanbo Luo, Aoyun Wu, Hui Li
Summary: This paper investigates the AC apparent power calculations for second-order memory elements and memristive systems, revealing their complex non-linear phenomena. The expressions for real power, reactive power, and apparent power are derived, highlighting the differences between ideal memory elements and traditional passive ones. The results show the presence of harmonic values and an extra term in the apparent power, indicating a continuous energy supply when operated with AC.
FRONTIERS IN PHYSICS
(2023)
Article
Mathematics, Interdisciplinary Applications
Yue Deng, Yuxia Li
Summary: A new memristor and memcapacitor model are proposed in this paper, and a simple chaotic circuit is constructed based on the two models. By adding a nonlinear controller, an anti-controlled system with hyperchaotic dynamic behaviors is realized. The stability and dynamic properties of the original system and the anti-controlled system are explored using Lyapunov exponents and bifurcation diagrams.
INTERNATIONAL JOURNAL OF BIFURCATION AND CHAOS
(2021)
Article
Engineering, Electrical & Electronic
Ya Li, Paiwen Fang, Jun Liang, Yanli Pei
Summary: In this study, a device with coexisting analog memristive and memcapacitive effects was developed for neuromorphic computing systems. The asynchronous switching behavior of resistance and capacitance in the device was attributed to the reversible migration of oxygen ions between metallic NiO(x) and semiconductor NiO. The device successfully mimicked simple synaptic functions and complex neural properties, presenting new applications for tunable oscillators and artificial neural networks.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2022)
Article
Computer Science, Information Systems
Niranjan Raj, Rajeev Kumar Ranjan, Fabian Khateb, Montree Kumngern
Summary: An emulator circuit of Memristor, Memcapacitor, and Meminductor, realized using current mode technique, has been demonstrated in this article. The circuit shows fingerprint characteristics and has been validated through various analyses for robustness of design.
Article
Engineering, Electrical & Electronic
Yue Liu, Herbert Ho-Ching Iu, Zhang Guo, Gangquan Si
Summary: This brief introduces a simple charge-controlled emulator for achieving three types of memory element, which can be further divided into grounded and floating forms. By combining three switches and preserved positions, the memristor, memcapacitor, and meminductor can be obtained. This emulator boasts the widest bandwidth and highest operating frequency, making it a cornerstone for designing high density, high-speed, low power integrated circuits.
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS
(2021)
Article
Engineering, Mechanical
Yue Deng, Shaoyan Li, Peng Zhang, Fang Yuan, Yuxia Li
Summary: This research presents a series of physical memristors with different TiO2 thicknesses, exploring their characteristics and mathematical models in the context of constructing nonlinear and chaotic circuits. A fifth-order memristive circuit is built to reveal the complex coexisting behaviors of multiple kinds of attractors. The numerical simulations are verified through the implementation of a hardware circuit.
NONLINEAR DYNAMICS
(2023)
Article
Computer Science, Hardware & Architecture
Mehmet Ziya Hosbas, Firat Kacar, Abdullah Yesil
Summary: This study proposes a method to transform an existing memristor into a memcapacitor using a mutator circuit based on VDTA. A memcapacitor circuit is designed by combining a VDTA-memristor and the new mutator structure. The proposed circuit has an internal transconductance gain and allows electronic control of the memcapacitance value.
ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING
(2022)
Article
Physics, Multidisciplinary
Xingce Liu, Jinpeng Wang
Summary: In this study, a chaotic circuit incorporating meminductors, memcapacitors, and memristors is designed and analyzed. The mathematical model and dynamic behaviors of the system are studied, showing special phenomena such as state transitions and coexistence of attractors. The circuit is implemented using DSP to demonstrate its feasibility.
FRONTIERS IN PHYSICS
(2022)
Article
Chemistry, Analytical
Bo Yu, Yifei Pu, Qiuyan He, Xiao Yuan
Summary: This paper proposes a principle of frequency-domain characteristic analysis for fractional-order memristor based on order- and F-frequency characteristic functions. It is successfully applied to the chain-scaling fractional-order memristor circuit and can quantitatively calculate the fractional-order memristance.
Article
Mathematics, Interdisciplinary Applications
Woo Sik Choi, Donguk Kim, Tae Jun Yang, Inseok Chae, Changwook Kim, Hyungjin Kim, Dae Hwan Kim
Summary: The electrical characteristics and switching mechanisms of two types of IGZO memristive devices with different electrode materials were analyzed. It was found that the endurance and retention characteristics of the devices improved, and the operational mechanisms were explained.
CHAOS SOLITONS & FRACTALS
(2022)
Article
Physics, Multidisciplinary
Tinggui Chen, Baizhan Xia, Dejie Yu, Chuanxing Bi
Summary: This study proposes a gradient phononic crystal structure for enhanced acoustic sensing. By breaking the symmetry of the PC structure, topologically protected edge states are introduced, resulting in topological acoustic rainbow trapping. The robustness and enhancement properties are verified numerically and experimentally.
