Journal
PHYSICS LETTERS A
Volume 375, Issue 2, Pages 170-173Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.physleta.2010.10.051
Keywords
Quantum wires; MBE; High index surfaces; Nanostructures; Atomic force microscopy; Photoluminescence
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Funding
- NSF [DMR-0520550]
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Molecular-Beam Epitaxy growth of multiple In0.4Ga0.6As layers on GaAs (311)A and GaAs (331)A has been investigated by Atomic Force Microscopy and Photoluminescence. On GaAs (311)A, uniformly distributed In0.4Ga0.6As quantum wires (QWRs) with wider lateral separation were achieved, presenting a significant improvement in comparison with the result on single layer [H. Wen, Z.M. Wang, G.J. Salamo, Appl. Phys. Lett. 84 (2004) 1756]. On GaAs (331)A, In0.4Ga0.6As QWRs were revealed to be much straighter than in the previous report on multilayer growth [Z. Gong, Z. Niu, Z. Fang, Nanotechnology 17 (2006) 1140]. These observations are discussed in terms of the strain-field interaction among multilayers, enhancement of surface mobility at high temperature, and surface stability of GaAs (311)A and (331)A surfaces. (C) 2010 Elsevier B.V. All rights reserved.
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