Journal
PHYSICAL REVIEW LETTERS
Volume 110, Issue 3, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.110.035702
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Funding
- National Science Foundation [DMR-09-29966, DMR-09-01907]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [0901952] Funding Source: National Science Foundation
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [0901907] Funding Source: National Science Foundation
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A quantum phase transition that was recently observed in a high-mobility silicon metal-oxide-semiconductor field-effect transistor is analyzed in terms of a scaling theory. The most striking characteristic of the transition is a divergence of the thermopower, according to an inverse linear law, as a critical value of the electron density is approached. A scaling description of this transition yields predictions about the critical behavior of other observables, e. g., the specific heat. We also explore the possibility that this transition realizes a recently predicted transition from a Fermi liquid to a non-Fermi-liquid state.
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