4.8 Article

Coherent Control of GHz Resonant Modes by an Integrated Acoustic Etalon

Journal

PHYSICAL REVIEW LETTERS
Volume 110, Issue 8, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.110.086109

Keywords

-

Funding

  1. United States Air Force Office of Scientific Research through Multidisciplinary University Research Initiative program [FA9550-08-1-0340]
  2. U.S. Department of Energy Office of Science, Office of Basic Energy Sciences [DE-SC0000957]

Ask authors/readers for more resources

By carefully tuning the thickness of a compliant thin film placed within an acoustic cavity, we achieve coherent control of the cavity's acoustic resonances, analogous to the operation of an optical etalon. This technique is demonstrated using a supported membrane oscillator in which multiple high-frequency harmonic resonances are simultaneously optoexcited by an ultrafast laser. Theoretical and computational methods are used to analyze the selective strengthening or suppression of these resonances by constructive or destructive interference. DOI: 10.1103/PhysRevLett.110.086109

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.8
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

Article Physics, Applied

High quality GaN-on-SiC with low thermal boundary resistance by employing an ultrathin AlGaN buffer layer

Yuxia Feng, Huarui Sun, Xuelin Yang, Kang Liu, Jie Zhang, Jianfei Shen, Danshuo Liu, Zidong Cai, Fujun Xu, Ning Tang, Tongjun Yu, Xinqiang Wang, Weikun Ge, Bo Shen

Summary: High-quality GaN films on SiC with low thermal boundary resistance are achieved by using an ultrathin low Al content AlGaN buffer layer, which improves crystal quality and reduces thermal boundary resistance simultaneously. Enhanced lateral growth rate contributes to the formation of basal plane stacking faults in GaN, significantly reducing threading dislocation density. The mechanisms of reducing thermal boundary resistance and dislocation density by the ultrathin buffer layer are revealed, showing importance for performance improvement and cost reduction of higher power GaN-on-SiC electronics.

APPLIED PHYSICS LETTERS (2021)

Article Chemistry, Physical

Thermal conductivity of exfoliated and chemical vapor deposition-grown tin disulfide nanofilms: role of grain boundary conductance

Meng Zhang, Bo Zou, Xu Zhang, Yan Zhou, Huarui Sun

Summary: The study reveals that the thermal conductivity of polycrystalline SnS2 film is lower, approximately half that of single-crystalline SnS2 film, mainly due to phonon scattering at grain boundaries. Two simulation approaches suggest that thermal transport across crystal grains leads to the reduction of thermal conductivity, therefore, the thermal conductivity of polycrystalline SnS2 film can be substantially reduced by tuning the grain size.

JOURNAL OF ALLOYS AND COMPOUNDS (2021)

Article Chemistry, Multidisciplinary

Controlled Growth of Large-Sized and Phase-Selectivity 2D GaTe Crystals

Mingqiang Liu, Shuo Yang, Mao Han, Simin Feng, Gui-Gen Wang, Leyang Dang, Bo Zou, Yawei Cai, Huarui Sun, Jie Yu, Jie-Cai Han, Zheng Liu

Summary: The controlled growth of large-sized GaTe with high quality, chemical uniformity, and good reproducibility is achieved through liquid-metal-assisted chemical vapor deposition method. This method can also be used to synthesize various Ga-based 2D materials and their alloys, showing good universality. Raman spectra suggest that the grown GaTe has a relatively weak van der Waals interaction, and monoclinic GaTe displays highly-anisotropic optical properties.

SMALL (2021)

Article Chemistry, Multidisciplinary

Gas-Assisted Cocrystal Desublimation

Shea Sanvordenker, Siddharth Borsadia, Steve Morris, Nair Rodriguez-Hornedo, Max Shtein

Summary: This study reports a novel process for the sublimation, transportation, and high-velocity directed deposition of pharmaceutical cocrystals, resulting in the formation of nano- and microscopic cocrystals. This touch-free, nonmechanical, single-step method enables particle size reduction and surface coating of cocrystals.

CRYSTAL GROWTH & DESIGN (2022)

Article Chemistry, Physical

Reliable and broad-range layer identification of Au-assisted exfoliated large area MoS2 and WS2 using reflection spectroscopic fingerprints

Bo Zou, Yu Zhou, Yan Zhou, Yanyan Wu, Yang He, Xiaonan Wang, Jinfeng Yang, Lianghui Zhang, Yuxiang Chen, Shi Zhou, Huaixin Guo, Huarui Sun

Summary: The emerging Au-assisted exfoliation technique enables the production of large-area and high-quality ultrathin 2D crystals. A simple and accurate optical method has been developed to determine the layer number of Au-assisted exfoliated MoS2 and WS2 films.

NANO RESEARCH (2022)

Article Crystallography

Interlayer Investigations of GaN Heterostructures Integrated into Silicon Substrates by Surface Activated Bonding

Shi Zhou, Shun Wan, Bo Zou, Yanping Yang, Huarui Sun, Yan Zhou, Jianbo Liang

Summary: Thinning the buffer layer between GaN and Si substrate is desired for GaN-on-Si devices. Surface activated bonding (SAB) was used to directly bond GaN-on-Si heterostructures at room temperature. The effects of thermal annealing on residual stress and interfacial microstructure were investigated. It was found that a significant relaxation and uniform stress distribution was achieved in SAB bonded GaN-on-Si heterostructures, but the residual stresses evolved differently with increasing annealing temperature.

CRYSTALS (2023)

Article Automation & Control Systems

Reinforcement Learning Enabled Autonomous Manufacturing Using Transfer Learning and Probabilistic Reward Modeling

Md Ferdous Alam, Max Shtein, Kira Barton, David Hoelzle

Summary: This paper proposes a reinforcement learning enabled physical autonomous manufacturing system that can autonomously fabricate complex-geometry artifacts by learning manufacturing process parameters. To improve sample efficiency, the authors use first-principles based source task for training, transfer effective representations, and learn a probabilistic model of the target reward function. The effectiveness of the method is demonstrated through experiments on a custom AMS machine.

IEEE CONTROL SYSTEMS LETTERS (2023)

Correction Chemistry, Multidisciplinary

Gas-Assisted Cocrystal Desublimation (vol 22, pg 1528, 2022)

Shea Sanvordenker, Siddharth Borsadia, Steve Morris, Nair Rodriguez-Hornedo, Max Shtein

CRYSTAL GROWTH & DESIGN (2023)

Article Engineering, Electrical & Electronic

High-Performance Acoustic Wave Devices on LiTaO3/SiC Hetero-Substrates

Liping Zhang, Shibin Zhang, Jinbo Wu, Pengcheng Zheng, Hongyan Zhou, Hulin Yao, Zhongxu Li, Kai Huang, Huarui Sun, Xin Ou

Summary: This article introduces the high-performance shear horizontal surface acoustic wave (SH-SAW) and longitudinal leaky SAW (LL-SAW) devices using Lithium Tantalate (LiTaO3) thin films on silicon carbide (SiC) substrate. The demonstrated LTOSiC hetero-substrate achieved exciting results on device frequency, quality factor (Q), temperature coefficient of frequency (TCF), and thermal transport properties. The resonators show scalable resonances and the filters exhibit desirable center frequencies, insertion loss, and out-of-band rejection. Overall, LTOSiC serves as an advanced material platform for acoustic devices in the 5G-frequency range 1 (5G-FR1) bands.

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES (2023)

Article Chemistry, Physical

Enriched electrophilic oxygen species facilitate acidic oxygen evolution on Ru-Mo binary oxide catalysts

Yaya Wang, Yunzhou Wen, Yumeng Cheng, Xinhong Chen, Mengjiao Zhuansun, Tongbao Wang, Jun Li, Debora Meira, Huarui Sun, Jun Wei, Jia Zhou, Yuhang Wang, Sisi He

Summary: The development of a Ru5Mo4Ox binary oxide catalyst as a replacement for expensive iridium-based catalysts in acidic oxygen evolution reaction (OER) has shown high activity and stability, resulting in a reduction in the cost of green hydrogen production.

NANO RESEARCH (2023)

Article Chemistry, Physical

First-Principles Thermoelectric Study of SrMgSi and CaMgGe Zintl-Phase Compounds

Jinfeng Yang, Zhaoyu Yang, Xiaonan Wang, Yuxiang Chen, Yongze Xu, Bo Zou, Yuli Yan, Huarui Sun

Summary: In this study, Zintl-phase TiNiSi-type SrMgSi and CaMgGe with low intrinsic lattice thermal conductivity were investigated for thermoelectric applications. The low thermal conductivity is attributed to the strong lattice anharmonicity and optical-acoustic phonon coupling, while the high band degeneracy leads to good electrical properties. The predicted ZT values for SrMgSi and CaMgGe were 2.83 and 3.09, respectively.

ACS APPLIED ENERGY MATERIALS (2023)

Correction Chemistry, Multidisciplinary

Gas-Assisted Cocrystal Desublimation (vol 22, pg 1528, 2022)

Shea Sanvordenker, Siddharth Borsadia, Steve Morris, Nair Rodriguez-Hornedo, Max Shtein

CRYSTAL GROWTH & DESIGN (2023)

Article Chemistry, Physical

Delamination of MoS2/SiO2 interfaces under nanoindentation

Jin Ke, Penghua Ying, Yao Du, Bo Zou, Huarui Sun, Jin Zhang

Summary: This study investigates the mechanical properties of the multilayer MoS2/SiO2 system through experiments and simulations and compares them with the graphene/SiO2 system. It is found that the MoS2/SiO2 and graphene/SiO2 systems have comparable Young's modulus and hardness values, but exhibit different mechanical responses and failure modes under indentation. The MoS2/SiO2 system shows interface delamination failure, while the graphene/SiO2 system does not. This difference can be attributed to the different bending stiffness values between MoS2 and graphene.

PHYSICAL CHEMISTRY CHEMICAL PHYSICS (2022)

Article Multidisciplinary Sciences

Efficient thermal dissipation in wafer-scale heterogeneous integration of single-crystalline β-Ga2O3 thin film on SiC

Wenhui Xu, Tiangui You, Yibo Wang, Zhenghao Shen, Kang Liu, Lianghui Zhang, Huarui Sun, Ruijie Qian, Zhenghua An, Fengwen Mu, Tadatomo Suga, Genquan Han, Xin Ou, Yue Hao, Xi Wang

Summary: β-Ga2O3 is a promising semiconductor for high power electronic devices due to its ultra-wide bandgap and large figure of merit, but its thermal conductivity is lower than other wide bandgap semiconductors, leading to self-heating issues. By integrating β-Ga2O3 thin films on a highly thermally conductive SiC substrate, thermal performance can be effectively improved, reducing the effective thermal boundary resistance.

FUNDAMENTAL RESEARCH (2021)

Article Chemistry, Physical

Unambiguous determination of crystal orientation in black phosphorus by angle-resolved polarized Raman spectroscopy

Bo Zou, Yadong Wei, Yan Zhou, Dingning Ke, Xu Zhang, Meng Zhang, Cho-Tung Yip, Xiaobin Chen, Weiqi Li, Huarui Sun

Summary: By conducting systematic ARPRS measurements, the degree of anisotropy in the response of black phosphorous evolves gradually and periodically with thickness, leading to intricate response. Crystal orientations of BP can be distinguished using Raman peak intensity ratio, where external anisotropic interference effect and intrinsic electron-phonon coupling play crucial roles in the observations.

NANOSCALE HORIZONS (2021)

No Data Available