4.8 Article

Theory of Spin-Dependent Phonon-Assisted Optical Transitions in Silicon

Journal

PHYSICAL REVIEW LETTERS
Volume 105, Issue 3, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.105.037204

Keywords

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Funding

  1. AFOSR [FA9550-09-1-0493]
  2. NSF [ECCS-0824075]
  3. Directorate For Engineering
  4. Div Of Electrical, Commun & Cyber Sys [0824075] Funding Source: National Science Foundation

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Silicon is an ideal material choice for spintronics devices due to its relatively long spin relaxation time and mature technology. To date, however, there are no parameter-free methods to accurately determine the degree of spin polarization of electrons in silicon. This missing link is established with a theory that provides concise relations between the degrees of spin polarization and measured circular polarization for each of the dominant phonon-assisted optical transitions. The phonon symmetries play a key role in elucidating recent spin injection experiments in silicon.

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