Journal
PHYSICAL REVIEW LETTERS
Volume 105, Issue 3, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.105.037204
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Funding
- AFOSR [FA9550-09-1-0493]
- NSF [ECCS-0824075]
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [0824075] Funding Source: National Science Foundation
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Silicon is an ideal material choice for spintronics devices due to its relatively long spin relaxation time and mature technology. To date, however, there are no parameter-free methods to accurately determine the degree of spin polarization of electrons in silicon. This missing link is established with a theory that provides concise relations between the degrees of spin polarization and measured circular polarization for each of the dominant phonon-assisted optical transitions. The phonon symmetries play a key role in elucidating recent spin injection experiments in silicon.
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