4.8 Article

An In-Plane Solid-Liquid-Solid Growth Mode for Self-Avoiding Lateral Silicon Nanowires

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PHYSICAL REVIEW LETTERS
Volume 102, Issue 12, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.102.125501

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We report an in-plane solid-liquid-solid (IPSLS) mode for obtaining self-avoiding lateral silicon nanowires (SiNW) in a reacting-gas-free annealing process, where the growth of SiNWs is guided by liquid indium drops that transform the surrounding a-SiH matrix into crystalline SiNWs. The SiNWs can be similar to mm long, with the smallest diameter down to similar to 22 nm. A high growth rate of > 10(2) nm/s and rich evolution dynamics are revealed in a real-time in situ scanning electron microscopy observation. A qualitative growth model is proposed to account for the major features of this IPSLS SiNW growth mode.

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