Journal
PHYSICAL REVIEW LETTERS
Volume 101, Issue 13, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.101.136403
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Funding
- National Science Foundation [DMR-0604501]
- R. A. Welch Foundation [D-1321]
- NSERC of Canada
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We have determined locations for the donor and acceptor levels of muonium in six semiconductor materials (Si, Ge, GaAs, GaP, ZnSe, and 6H-SiC) as a test of defect-level pinning for hydrogen. Within theoretical band alignments, our results indicate a common energy for the equilibrium charge-transition level Mu(+/-) to within experimental uncertainties. However, this is nearly 0.5 eV higher than the energy at which the equivalent level for hydrogen was predicted to be pinned. Corrections for zero-point energy account for only about 10% of this difference. We also report experimental results for the (negative-U) difference between donor and acceptor levels for Mu to be compared with calculated values for H impurities in the same materials.
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