4.6 Article

Stacking-dependent magnetoelectronic properties in multilayer graphene

Journal

PHYSICAL REVIEW B
Volume 90, Issue 20, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.90.205434

Keywords

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Funding

  1. Ministry of Science and Technology of Taiwan, the Republic of China [NSC 102-2112-M-006-007-MY3, NSC 102-2112-M-165-001-MY3]

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The generalized Peierls tight-binding model is developed to study multilayer graphenes. For an N-layer system, there are N groups of conduction and valence Landau levels. Each group is clearly specified by the corresponding sublattice. The Landau-level spectra strongly depend on the stacking configuration. ABC-stacked graphenes exhibit two kinds of Landau-level anticrossings, the intergroup and intragroup Landau levels, as a function of the applied magnetic field. On the other hand, in contrast to its frequent wide-energy presence in ABC-stacked graphenes, the anticrossing only occurs occasionally in AB-stacked graphenes, and is absent in AA-stacked graphenes. Furthermore, all 4N Dirac-point related Landau levels are distributed over a limited energy range near the Fermi level. In AA- and AB-stacked graphenes, the total number of such levels is fixed, while their energies depend on the stacking configuration. These results reflect the main features of the zero-field band structures.

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