Signatures of localization in the effective metallic regime of high-mobility Si MOSFETs

Two-dimensional metal-insulator transition as a strong localization induced crossover phenomenon

(2014) S. Das Sarma et al.   PHYSICAL REVIEW B

Universal density scaling of disorder-limited low-temperature conductivity in high-mobility two-dimensional systems

(2013) S. Das Sarma et al.   PHYSICAL REVIEW B

Interplay between phonon and impurity scattering in two-dimensional hole transport

(2012) Hongki Min et al.   PHYSICAL REVIEW B

Colloquium: Transport in strongly correlated two dimensional electron fluids

(2010) B. Spivak et al.   REVIEWS OF MODERN PHYSICS

Observation of percolation-induced two-dimensional metal-insulator transition in a Si MOSFET

(2009) L. A. Tracy et al.   PHYSICAL REVIEW B

Interaction effects in conductivity of a two-valley electron system in high-mobility Si inversion layers

(2008) N. N. Klimov et al.   PHYSICAL REVIEW B