Vacancy-mediated three-center four-electron bonds in GeTe-Sb2Te3phase-change memory alloys
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Title
Vacancy-mediated three-center four-electron bonds in GeTe-Sb2Te3phase-change memory alloys
Authors
Keywords
-
Journal
PHYSICAL REVIEW B
Volume 87, Issue 16, Pages -
Publisher
American Physical Society (APS)
Online
2013-04-23
DOI
10.1103/physrevb.87.165206
References
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Related references
Note: Only part of the references are listed.- Polarization dependent optical control of atomic arrangement in multilayer Ge-Sb-Te phase change materials
- (2012) Kotaro Makino et al. APPLIED PHYSICS LETTERS
- Epitaxial phase-change materials
- (2012) Peter Rodenbach et al. Physica Status Solidi-Rapid Research Letters
- Phase-Change Materials: Vibrational Softening upon Crystallization and Its Impact on Thermal Properties
- (2011) Toshiyuki Matsunaga et al. ADVANCED FUNCTIONAL MATERIALS
- Crystallization study of “melt quenched” amorphous GeTe by transmission electron microscopy for phase change memory applications
- (2011) A. Bastard et al. APPLIED PHYSICS LETTERS
- Defect models and electrical storage mechanism in GeSbTe phase change materials
- (2011) B. Huang et al. JOURNAL OF NON-CRYSTALLINE SOLIDS
- Distortion-triggered loss of long-range order in solids with bonding energy hierarchy
- (2011) A.V. Kolobov et al. Nature Chemistry
- Interfacial phase-change memory
- (2011) R. E. Simpson et al. Nature Nanotechnology
- Local atomic order of crystalline Ge8Sb2Te11across the ferroelectric to paraelectric transition: The role of vacancies and static disorder
- (2011) M. Krbal et al. PHYSICAL REVIEW B
- Intrinsic complexity of the melt-quenched amorphous Ge2Sb2Te5memory alloy
- (2011) M. Krbal et al. PHYSICAL REVIEW B
- Epitaxy of Ge–Sb–Te phase-change memory alloys
- (2009) Wolfgang Braun et al. APPLIED PHYSICS LETTERS
- First-principles study of crystalline and amorphous Ge2Sb2Te5and the effects of stoichiometric defects
- (2009) S Caravati et al. JOURNAL OF PHYSICS-CONDENSED MATTER
- Initial Structure Memory of Pressure-Induced Changes in the Phase-Change Memory AlloyGe2Sb2Te5
- (2009) M. Krbal et al. PHYSICAL REVIEW LETTERS
- Nature of Atomic Bonding and Atomic Structure in the Phase-ChangeGe2Sb2Te5Glass
- (2009) M. Xu et al. PHYSICAL REVIEW LETTERS
- Microscopic origin of the fast crystallization ability of Ge–Sb–Te phase-change memory materials
- (2008) J. Hegedüs et al. NATURE MATERIALS
- Resonant bonding in crystalline phase-change materials
- (2008) Kostiantyn Shportko et al. NATURE MATERIALS
- Matching Glass-Forming Ability with the Density of the Amorphous Phase
- (2008) Y. Li et al. SCIENCE
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