Atomistic modeling of the Au droplet–GaAs interface for size-selective nanowire growth
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Title
Atomistic modeling of the Au droplet–GaAs interface for size-selective nanowire growth
Authors
Keywords
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Journal
PHYSICAL REVIEW B
Volume 88, Issue 15, Pages -
Publisher
American Physical Society (APS)
Online
2013-10-12
DOI
10.1103/physrevb.88.155309
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Note: Only part of the references are listed.- Advances in the theory of III–V nanowire growth dynamics
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- Growth Mechanism of Self-Catalyzed Group III−V Nanowires
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- Band Structure Effects on the Scaling Properties of [111] InAs Nanowire MOSFETs
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