Anomalous response to gate voltage application in mesoscopic LaAlO3/SrTiO3devices
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Title
Anomalous response to gate voltage application in mesoscopic LaAlO3/SrTiO3devices
Authors
Keywords
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Journal
PHYSICAL REVIEW B
Volume 87, Issue 12, Pages -
Publisher
American Physical Society (APS)
Online
2013-03-09
DOI
10.1103/physrevb.87.125409
References
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Related references
Note: Only part of the references are listed.- Tunable conductivity threshold at polar oxide interfaces
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- Dominant Mobility Modulation by the Electric Field Effect at theLaAlO3/SrTiO3Interface
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- Electric field control of the LaAlO3/SrTiO3 interface ground state
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- Origin of Metallic States at the Heterointerface between the Band InsulatorsLaAlO3andSrTiO3
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